XU Dongyan 徐東艷
Associate Professor, EEEN Programme Director
TEL: 852 - 3943 8045
Room 206, William M.W. Mong Engineering Building

Prof. Dongyan Xu received her B.Eng., M.Eng., and D.Eng. degrees from the Department of Engineering Mechanics at Tsinghua University in 1998, 2004, and 2004, respectively. She received her Ph.D. degree from the Department of Mechanical Engineering at Vanderbilt University in 2008. After that, she worked as a Postdoc Fellow in the Department of Mechanical Engineering at the University of California, Berkeley for two years. She joined the Department of Mechanical and Automation Engineering, the Chinese University of Hong Kong, in 2010, where she currently is an Assistant Professor. Her research interests include thermoelectrics, thermal management, nanoscale heat transfer, energy conversion and storage, and micro/nanofluidics.

Research Interests
  • Micro/Nanoscale Heat Transfer
  • Thermoelectric Materials and Thermal Energy Harvesting Devices
  • Boiling Heat Transfer
  • Thermal Interface Materials
Current Projects
  • Enhancing Thermoelectric Figure of Merit of Bismuth Selenide Nanoribbons by Defect Engineering
  • Enhancing Flow Boiling Heat Transfer in Microchannels by Surface Engineering
Teaching by Years
MAEG4030 Heat Transfer
MAEG5150 Advanced Heat Transfer and Fluid Mechanics
MAEG4030 Heat Transfer
MAEG2030 Thermodynamics
MAEG4030 Heat Transfer
MAEG2030 Thermodynamics
MAEG5150 Advanced Heat Transfer and Fluid Mechanics

Journal Papers (in the recent five years)

  1. X. Wang, R. Guo, D. Xu, J. D. Chung, M. Kaviany, and B. Huang, “Anisotropic Lattice Thermal Conductivity and Suppressed Acoustic Phonons in MOF-74 from First Principles,” J. Phys. Chem. C, DOI: 10.1021/acs.jpcc.5b08675 (2015).
  2. W. Chen, J. Yang, Z. Wei, C. Liu, K. Bi, D. Xu, D. Li, and Y. Chen, “Effects of Interfacial Roughness on Phonon Transport in Bilayer Silicon Thin Films,” Phys. Rev. B 92, Art. No. 134113 (2015).
  3. J. Yang*, H. Tang, Y. Zhao, Y. Zhang, J. Li, Z. Ni, Y. Chen, and D. Xu*, “Thermal Conductivity of Zinc Blende and Wurtzite CdSe Nanostructures,” Nanoscale 7, 16071-16078 (2015).
  4. A. Zhou, Q. Fu, W. Zhang, B. Yang, J. Li, P. Ziolkowski, E. Mueller, and D. Xu*, “Enhancing the Thermoelectric Properties of the Electroplated Bi2Te3 Films by Tuning the Pulse Off-to-on Ratio,” Electrochim. Acta 178, 217-224 (2015).
  5. Y. Li, X. Wang, D. Xu, J. D. Chung, M. Kaviany, and B. Huang, “H2O Adsorption/Desorption in MOF-74: Ab Initio Molecular Dynamics and Experiments,” J. Phys. Chem. C 119, 13021-13031 (2015).
  6. J. Mo, L. Li, J. Zhou, D. Xu, B. Huang, and Z. Li, “Fluid Infiltration Pressure for Hydrophobic Nanochannels,” Phys. Rev. E 91, Art. No. 033022 (2015).
  7. H. Tang, X. Wang, Y. Xiong, Y. Zhao, Y. Zhang, Y. Zhang, J. Yang*, and D. Xu*, “Thermoelectric Characterization of Individual Bismuth Selenide Topological Insulator Nanoribbons,” Nanoscale 7, 6683-6690 (2015).
  8. Q. Fu, J. Yang*, Y. Chen, D. Li, and D. Xu*, “Experimental Evidence of Very Long Intrinsic Phonon Mean Free Path along the c-axis of Graphite,” Appl. Phys. Lett. 106, Art. No. 031905 (2015).
  9. J. Sun, L. Zhang, J. Wang, Q. Feng, D. Liu, Q. Yin, D. Xu, Y. Wei, B. Ding, X. Shi, and X. Jiang, “Tunable Rigidity of (Polymeric Core)-(Lipid Shell) Nanoparticles for Regulated Cellular Uptake,” Adv. Mater. 27, 1402-1407 (2015).
  10. J. Wu, X. Wang, M. Chen, D. Xu*, and J. Yang*, “Estimation of Temperature Coefficient of Resistance for Microfabricated Platinum Thermometers in Thermal Conductivity Measurements of One-dimensional Nanostructures,” Meas. Sci. Technol. 25, Art. No. 025008 (2014).
  11. J. P. Feser*, D. Xu*, H. Lu, Y. Zhao, A. Shakouri, A. C. Gossard, and A. Majumdar, “Reduced Thermal Conductivity in Er-doped Epitaxial InxGa1-xSb Alloys,” Appl. Phys. Lett. 103, Art. No. 103102 (2013).
  12. J. Zide, J. Bahk, R. Singh, M. Zebarjadi, G. Zeng, H. Lu, J. Feser, D. Xu, S. Singer, Z. Bian, A. Majumdar, J. Bowers, A. Shakouri, and A. Gossard, “High Efficiency Semimetal/Semiconductor Nanocomposite Thermoelectric Materials,” J. Appl. Phys., 108, Art. No. 123702 (2010).
  13. J. Bahk, Z. Bian, M. Zebarjadi, J. Zide, H. Lu, D. Xu, J. Feser, G. Zeng, A. Majumdar, A. Gossard, A. Shakouri, and J. Bowers, “Thermoelectric figure of merit of (In0.53Ga0.47As)0.8 (In0.52Al0.48As)0.2 III-V semiconductor alloys,” Phys. Rev. B 81, Art. No. 235209 (2010).